资讯🔥7.0
Intel 18A-P Pushes RibbonFET and Backside Power Beyond the First Generation
📌 概要
英特尔代工在LinkedIn发布技术博客，介绍18A-P工艺。18A-P并非全新节点，而是在18A基础上的性能增强衍生版本，进一步优化RibbonFET环绕栅极晶体管和背面供电技术，将两项关键创新推至超越第一代的水平。
⚡ 关键要点
- ▸18A-P是18A的性能增强衍生版本，而非全新工艺节点
- ▸RibbonFET环绕栅极晶体管与背面供电技术得到进一步优化
- ▸英特尔代工通过LinkedIn博客持续输出技术内容，强调其可信技术专家视角
Intel Foundry has a blog on LinkedIn that is worth a look. The blogs are by trusted Intel Foundry technical experts and are filled with content. I will cherry pick write a bit about them but be sure and subscribe to this, absolutely.
Intel 18A-P is not a new process node in the conventional sense. It is a performance-enhanced derivative… Read More
The post Intel 18A-P Pushes RibbonFET and Backside Power Beyond the First Generation appeared first on SemiWiki.