TSMC, Samsung, and Intel shore up support with ASML to deploy larger High-NA EUV photomasks — 6×12-inch photomask transition may take years despite unified effort

📋总体概括

ASML与Intel、三星、台积电联合推进6×12英寸大尺寸光罩开发，目标是让High-NA EUV光刻机在不采用拼接技术的前提下制造更大面积的处理器芯片。由于High-NA EUV曝光场面积缩小约一半，现有6×6英寸光罩无法覆盖大尺寸芯片，行业需要更大光罩来避免拼接带来的良率与设计复杂性问题。但光罩从6×6英寸向6×12英寸的过渡涉及基板、膜材、检测与写入设备全链条改造，多家媒体判断即便各方协调推进，完整过渡仍需数年。