资讯🔥8.0
Samsung teases new HBM5 with twice the performance of HBM4E —ambitious data transfer rates could hint at 4,096-bit interface
📌 概要
三星预告其HBM5内存计划，目标在2020年代末实现单堆栈4 TB/s带宽，性能约为HBM4E的两倍，并可能采用4096-bit接口。该技术有望让AI加速器聚合内存带宽达到约100 TB/s，进一步巩固三星在高带宽内存领域与SK海力士的竞争地位。
⚡ 关键要点
- ▸三星HBM5目标单堆栈带宽4 TB/s，性能为HBM4E的两倍
- ▸可能采用4096-bit超宽接口实现高数据传输率
- ▸AI加速器聚合内存带宽有望达约100 TB/s，预计2020年代末落地
Samsung expects HBM5 to deliver 4 TB/s of bandwidth per stack by late 2020s, which will enable AI accelerators with aggregated memory bandwidth of around 100 TB/s.