资讯🔥8.0
The current state of Hybrid Bonding in 2026 — TSMC sits at 6 microns and the HBM delay that nobody expected
📌 概要
2026年混合键合技术呈现'逻辑成熟、存储推迟'分化局面：台积电已在逻辑芯片3D堆叠中实现6微米间距的铜-铜键合并进入量产，取代传统焊料微凸点；而HBM存储领域的混合键合应用却意外推迟，良率与成本挑战仍在。
⚡ 关键要点
- ▸混合键合以铜-铜直接键合取代焊料微凸点，是3D芯片堆叠的核心工艺
- ▸台积电逻辑芯片混合键合已达6微米间距并实现大规模量产
- ▸HBM存储的混合键合应用意外推迟，量产时间表延后
Hybrid bonding, the copper-to-copper joining technique that replaces solder microbumps in 3D chip stacks, is in high-volume production on logic and freshly postponed on memory.